Nanoelectronics: GaN nanowires for nanoscale device applications
Photoconduction in single GaN nanowire has been studied.. The contacts have been fabricated on GaN nanowires using electron beam lithography (e-line plus system from Raith GmbH) and metal lift-off process. Cr/Au (10/40 nm) contacts were deposited using thermal evaporation technique and served as ohmic contacts on GaN nanowires. The fabricated devices on ultralong (hundreds of micrometers in length) GaN nanowires showed ultrahigh responsivity of ~ 105 A/W and normalized gain of ~ 0.95 cm2 /V-1 under ultra-violet illumination. Efforts are underway to measure the spectral photoresponsivity of GaN nanowires.